Tailored Polycrystalline Substrate for SmartSiC<sup>TM</sup> Substrates Enabling High Performance Power Devices

Silicon Carbide (SiC) Power Devices have emerged as a breakthrough technology for wide range of applications in the frame high-power electronics, notably 600 to 3,300V. The last decades shown continuous and impressive improvement both 4H-SiC wafer size quality. Nevertheless, availability such wafers remains challenge SiC power industry. In three years, Soitec has successfully adapted Smart Cut™ Carbide, resulting integration thin layer high quality on an ultra-low resistivity 3C p-SiC handle wafer. so-called SmartSiC™ offers drastic yield whole industry thanks multiple times re-use donor wafer, well device’s electrical performance, especially polycrystalline silicon carbide (p-SiC). latter being specially developed enhance new substrate capabilities. this paper, we present work done by Mersen tailor properties, thus ones including material.